Firstly, we focus on the theoretical work function of the different metal electrodes. Theoretical prediction of work function offers a convenient and complementary tool to cumbersome experiment. Nevertheless, these predictions are not perfect due to approximations that are meant to make theory tractable [61]. Work function is the minimum energy required to remove an electron from the Fermi level to a state where it is at rest, without interacting with the solid. It is the type of binding energy which is equal to energy difference between the vacuum level and the Fermi level. Chemically, it is defined as the difference between ionization potential and HOMO energy [62]. We initiated our research with local density approximation (LDA) and GGA for predicting work functions of the different electrodes using 9x9x1 k-point sampling given in Table 1. Experimental as well as theoretical values of work function reported by other researchers are also given in Table 1. Both LDA and GGA are found to yield excellent agreement of work function with other experimental and theoretical values with lesser error estimates[63–78].
If we scrutinize the electrodes on the basis of work function, we found that Au(111) and Pt(111) offers the maximum and Cu(111) offers the minimum work function in both LDA and GGA. We extend our further research using GGA as it gives balanced descriptions of structures and energies with overall improvement over LDA [67, 74].
Next, we focus on the energy offset between dominant molecular orbital and Fermi energy (Ef), which is used to predict the tunnelling barrier. In our theoretical modelling of Aspartic acid with different electrodes, the Highest Occupied Molecular Orbital (HOMO) lies closer to Fermi energy, providing the Hole tunnelling barrier. The Hole tunnelling barrier (HTB) can be given as where is the HOMO energy level of the molecular device. The HTB of l-Aspartic acid within different electrodes is given in fig 1(f).
Table 1 Work functions (eV) of different metallic electrodes
Metal
|
Others Experimental Work Function
|
Others Theoretical Work Function
|
Our Theoretical Work Function
|
LDA
|
GGA
|
LDA
|
GGA
|
Au(111)
|
5.26[75], 5.33±0.06 [63], 5.3 to 5.6[76]
|
5.49[65], 5.63[77]
|
5.12[65], 5.15 [78]
|
5.28
|
4.99
|
Ag(111)
|
4.56[75], 4.53±0.07 [63], 4.74[64], 4.75±0.01[68]
|
4.84[69], 4.97[65]
|
4.49[65]
|
4.78
|
4.22
|
Cu(111)
|
4.94[75], 4.9±0.02 [63], 4.94[70]
|
5.20[65]
|
4.88[65]
|
4.31
|
4.11
|
Pt(111)
|
5.82[75], 5.91±0.08 [63], 6.08±0.15[71]
|
6.08[65], 6.06[72]
|
5.72[65], 5.69[78]
|
5.21
|
5.08
|
Pd(111)
|
5.55[75], 5.67±0.12 [63], 5.44±0.03[73]
|
5.66[65], 5.64[72]
|
5.32[65], 5.25[78]
|
4.75
|
4.15
|
There is significant correlation between work function and tunnelling barrier of the molecular junctions. The Electrodes with higher work function result in lower tunnelling barriers [79]. This is clearly acceptable in our case as Pt (111) and Au (111) offers the maximum work function and Au-Aspartic-Au and Pt-Aspartic-Pt offers the minimum HTB. The lower tunnelling barrier of molecular device offers the stronger coupling between molecule and the electrode [80].
Next, we measure the conductance across the proposed molecular devices, which is expressed as , where is the significant quantum conductance unit and is the transmission coefficient of the channel. The value of i.e., , where is the elementary charge and is the Planck constant [81]. We notice that the conductance dip is visible in Ag-Aspartic-Ag and Cu-Aspartic-Cu devices as shown in Fig. 1(h) and (i). This is due to weak coupling of molecule to the specific electrode [82].
The conductance remains quantized within the finite bias range of -0.2 to +0.2V, -0.6 to +0.4V and -0.6 to +0.6V in case of Au-Aspartic-Au, Ag-Aspartic-Ag and Cu-Aspartic-Cu devices, shown in Fig.1(g, h and i) respectively. This quantized conductance implies insensitivity of the respective devices at specific bias range [83, 84]. Further, this insensitivity can lead to almost I-V characteristics of such devices within the same bias region.
The highest conductance peak appears at +0.2 V in case of Pt-Aspartic-Pt device. The molecule exhibits the least conductance with Cu-Aspartic-Cu device within the finite bias range of -2 to +2V. In case of Pd-Aspartic-Pd device, the conductance shows fluctuations of varying magnitude. The zero bias conductance of the proposed molecular devices follow the order as Pt-Aspartic-Pt (0.1184 G0) > Pd-Aspartic-Pd (0.0751 G0) > Au-Aspartic-Au (0.0650 G0) > Ag-Aspartic-Ag (0.0114 G0) >Cu-Aspartic-Cu (0.0034 G0). Different amino acids including l-aspartic acid, offers very less conductance even in experimental MCBJ techniques [32].
The coupling strength and the HTB between the electrodes and the molecule significantly influence the conductance of the molecular junction [85]. The zero bias conductance of different molecular devices correlates well with the work function of the metal electrodes based on GGA. The zero bias conductance is maximum in Pt-Aspartic-Pt and minimum in Cu-Aspartic-Cu.
Next, we observe the I-V characteristics and calculate the rectification ratios (RR) of all the proposed molecular devices in finite bias range of -2 to +2V. The current is approximately equal to integration of transmission coefficient within the bias window ranging from to , where is the magnitude of the bias voltage. The three- dimensional transmission spectra of the proposed molecular devices within the bias range of –2 to +2V is shown in the Fig.1 (l-p). The dotted black lines indicate the bias window. The molecule exhibits finite negative differential resistance (NDR) and RR with all the five electrodes.
In case of Au-Aspartic-Au device, the current changes almost linearly in the bias range of -0.8 to +0.8V as depicted in Fig. 2 (a). Three different NDR regions are observed in the different bias ranges. We noticed peak to valley ratio, ηg1= 1.33 with peak voltage (Vp) of 0.8V and valley voltage (Vv) of 1.2 V in case of Au-Aspartic-Au device. The other two NDR peaks observed in device using gold electrode as ηg2=1.21 (with Vp=1.8V, Vv=2.0V) and ηg3=1.27 (with Vp=-1.4V, Vv=-2.0V).
In case of Ag-Aspartic-Ag device, two instances of NDR are observed in only positive bias as ηs1=1.26 (with Vp=1.0V, Vv=1.4V) and ηs2=1.07(with Vp=1.6V, Vv=1.8V) shown in Fig. 2 (b). In case of Cu-Aspartic-Cu device, three different instances of NDR are observed as ηc1= 1.19 (with Vp=1.8 V, Vv=2V), ηc2= 1.03 (Vp=-1.2V, Vv=-1.4 V) and ηc3=1.18(Vp=-1.6 V, Vv=-1.8V) shown in Fig. 2 (c). In case of Pt-Aspartic-Pt device, five distinct NDR peaks are observed as ηpt1=1.14 (Vp=0.2 V, Vv=0.4V), ηpt2=1.38 (Vp=0.6 V, Vv=0.8 V), ηpt3=1.06 (Vp=1.0, Vv=1.2V), ηpt4=1.14 (Vp=1.8V, Vv=2.0V) and ηpt5=1.09 (Vp=-1.2V, Vv=-1.4V) as depicted in Fig. 2 (d). In case of Pd-Aspartic-Pd device, six distinct NDR peaks are observed as ηpd1= 1.05 (Vp=0.6V, Vv=0.8V), ηpd2=1.29 (Vp=1.2 V, Vv=1.4V), ηpd3=1.32 (Vp=1.6V, Vv=1.8V), ηpd4= 1.02 (Vp=-0.2V, Vv=-0.4V), ηpd5=1.01(Vp=-1.2V, Vv=-1.4V) and ηpd6=1.15(Vp=-1.6V, Vv=-2.0) as shown in Fig. 2 (e).
The flat conductance observed in both Ag-Aspartic-Ag device (i.e. from -0.6 to +0.4V) and Cu-Aspartic-Cu device (i.e. from -0.6 to +0.6V) (shown in Fig. 1 (h) and (i)) has insightful effect on their IV characteristics, (shown in Fig. 2 (b) and (c)) as the current does not show any significant rise within this specific bias range.
In case of Au-Aspartic-Au device, the molecule exhibits the highest rectification ratio of 1.89 at ±1.4 V as shown in inset of Fig 2 (a). As the bias voltage sweeps from 0.6 to 1.4 V, the rectification ratio increases with increase in bias voltage and then decreases with increase in bias voltage from 1.4 to 1.8V. This is due to the shifting of transmission peaks within the bias window with respect to change in bias voltage as shown in Fig.1 (l).
The molecule exhibits the highest rectification ratio of 1.81 (at ±1.8 V), 1.31 (at ± 2V), 3.20 (at ±0.2 V) and 1.87 (at ±0.4 V) with silver, copper, platinum and palladium electrodes, respectively shown in inset of Fig. 2 (b), (c), (d), and (e).
The NDR and rectifying behaviour of the device can be pointed by transmission spectra, which is the most significant representation of quantum transport behaviour. The appearance of transmission peaks within the bias window (shown in Fig. 1(l-p)) can be attributed to the enhancement of current.
The I-V range for molecular devices at finite bias range of –2 to +2V, increases as the electrode work function increases. The Cu-Aspartic-Cu has minimum I-V range but Pt-Aspartic-Pt has maximum I-V range. Junctions with higher contact resistance have smaller coupling strength [86]. The higher the work function, the closer is the HOMO to the Fermi level, smaller is the offset between HOMO and Fermi energy (i.e. HTB) and the stronger is the molecule-electrode coupling [80].
We now focus on the cause of the highest NDR and RR of respective devices. In Fig. 2(f), (g), (i) and (j) the area under the curve decreases with increase in bias voltage, which causes the existence of NDR behaviour. In Fig. 2(h), the HOMO shifts away from the vicinity of Fermi level with increase in bias voltage from 1.8 to 2.0V. This shift causes the destruction of HOMO to split into HOMO and HOMO-1 resonances, which causes the NDR behaviour.
In case of Au-Aspartic-Au device, the area covered under HOMO and HOMO-1 resonant peaks at -1.4V is more as compared to +1.4V, reflecting the cause of rectification ratio as shown in Fig. 2 (k). In case of Ag-Aspartic-Ag device, though HOMO of +1.8V is near to the Fermi level, yet the combination of HOMO and HOMO-1 of -1.8V is more effective to show more current shown in Fig. 2 (l).
In case of Cu-Aspartic-Cu device, the closeness of HOMO near the Fermi level at -2.0V depicts more current than +2.0 V as shown in Fig.2 (m). The area covered under the bias voltage of +0.2V and +0.4V is higher than -0.2V and -0.4 V in Pt-Aspartic-Pt and Pd-Aspartic-Pd devices, respectively shown in Fig. 2 (n) and (o). This clearly explains the cause of rectification ratio.
In order to emphasize more on the cause of rectification ratio, we need to focus on the Molecular Projected Self-consistent Hamiltonian (MPSH) states of proposed molecular devices. In Table 2, the bias voltage of -1.4 V shows more delocalization at HOMO-1 as compared to +1.4 V in Au-Aspartic-Au device, justifying the rectification ratio.
Table 2 (Color online) MPSH states of Au-Aspartic-Au at ±1.4V, Ag-Aspartic-Ag at ±1.8V, Cu-Aspartic-Cu at ±2 V, Pt-Aspartic-Pt at ±0.2 V, and Pd-Aspartic-Pd at ±0.4V.
In case of Ag-Aspartic-Ag device, HOMO-1 of -1.8V shows the significant delocalization, due to presence of only bonding orbitals. Presence of only bonding or non-bonding molecular orbitals is more significant than combination of either with antibonding [87]. The HOMO-2 of +1.8 V in case of Ag-Aspartic-Ag device shows less favourable delocalization, due to the merging of bonding and antibonding orbitals. In case of Cu-Aspartic-Cu device, the HOMO and HOMO-1 at -2V shows more significant delocalization as compared to same combination (i.e. HOMO and HOMO-1) at +2V. In case of Pt-Aspartic-Pt device, the HOMO-1 at +0.2V depicts the more favourable delocalization as compared to HOMO-1 of -0.2V. In case of Pd-Aspartic-Pd device, the HOMO and HOMO-1 at +0.4V shows more delocalization as compared to the equivalent combination at -0.4V thus advocating the cause of rectification ratio. The enlarged view of delocalization in HOMO-1 of Pt-Aspartic-Pt at ±0.2V is shown in Fig. S1 to S2 in Supplementary files.