Ripples scattering of sidewall in pattern devices is efficient and necessary for monitoring the semiconductor fabrication process. As a step towards improving the imaging quality in terms of scattering, an attempt has been made to use our recently reported method called Parametric Indirect Microscopic Imaging (PIMI) for the thin layer of pattern devices. The present study demonstrates that the resolving power of PIMI imaging for the sidewall of the pattern devices is better than that of the conventional microscopy techniques. The better resolving power of the present PIMI technique for imaging the sidewalls paves the (new) way for its industrial application for the inspection of the integrated semiconductor circuits. For the demonstration, PIMI images have been compared with AFM, which are very close agreement.