[1] Mike Cooke. Excitonic prospects for UV. III-Vs Review. 2006; doi: 10.1016/S0961-1290(06)71711-2
[2] Michael Kneissl, Tae-Yeon Seong, Jung Han and Hiroshi Amano. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nature Photonics. 2019; doi: 10.1038/s41566-019-0359-9
[3] Godar DE, Miller SA and Thomas DP. Immediate and delayed apoptotic cell death mechanisms: UVA versus UVB and UVC radiation. Cell Death and Differentiation. 1994; doi: 10.1038/cdd.2008.157
[4] Haitao Chen, Yutao Tang, Tian Jiang and Guixin Li. Nonlinear Nanophotonics With 2D Transition Metal Dichalcogenides. Comprehensive Nanoscience and Nanotechnology. 2nd ed. Elsevier, 2019, pp. 305–318.
[5] Kin Fai Mak, Changgu Lee, James Hone, Jie Shan, and Tony F. Heinz. Atomically thin MoS2: A new direct-gap semiconductor. Physical Review Letters. 2010; doi: 10.1103/PhysRevLett.105.136805
[6] Andrea Splendiani, Liang Sun, Yuanbo Zhang, Tianshu Li, Jonghwan Kim, Chi-Yung Chim, Giulia Galli, and Feng Wang. Emerging photoluminescence in monolayer MoS2. Nano Letter. 2010; doi: 10.1021/nl903868w
[7] Keh-Yung Cheng. III–V Compound Semiconductors and Devices. Springer; 2020.
[8] Di Xiao, Gui-Bin Liu, Wanxiang Feng, Xiaodong Xu, and Wang Yao. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Physical Review Letters. 2012; doi: 10.1103/PhysRevLett.108.196802
[9] Xiaodong Xu, Wang Yao, Di Xiao and Tony F. Heinz. Spin and pseudospins in layered transition metal dichalcogenides. Nature Physics. 2014; doi: 10.1038/nphys2942
[10] Haug, H. and Koch, S.W. Quantum Theory of the Optical and Electronic Properties of Semiconductors. World Scientific Publishing; 2009.
[11] Kin Fai Mak and Jie Shan. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides. Nature Photonics. 2016; doi: 10.1038/nphoton.2015.282
[12] J. Feldmann, G. Peter, E. O. Göbel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliott. Linewidth dependence of radiative exciton lifetimes in quantum wells. Physical Review Letters. 1987; doi: 10.1103/PhysRevLett.59.2337
[13] Hartmut Haug and L. Banyai. Optical Switching in Low-Dimensional Systems. Springer; 2012.
[14] K. Sivalertporn, L. Mouchliadis, A. L. Ivanov, R. Philp, and E. A. Muljarov. Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field. Physical Review B. 2012; doi: 10.1103/PhysRevB.85.045207
[15] Satoshi Koizumi, Kenji Watanabe, Masataka Hasegawa and Hisao Kanda Ultraviolet emission from a diamond pn junction. Science. 2001; doi: 10.1002/chin.200140017
[16] T. Makino, Y. Segawa, M. Kawasaki and H. Koinuma. Optical properties of excitons in ZnO-based quantum well heterostructures. Semiconductor Science and Technology. 2004; doi: 10.1088/0268-1242/20/4/010
[17] Yoshitaka Taniyasu, Makoto Kasu and Toshiki Makimoto. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature. 2006; doi: 10.1038/nature04760
[18] John Simon, Vladimir Protasenko, Chuanxin Lian, Huili Xing and Debdeep Jena. Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures. Science. 2010; doi: 10.1126/science.1183226
[19] J. Thirumalai. Light-Emitting Diode. IntechOpen; 2018.
[20] M. Ajmal Khan, Eriko Matsuura, Yukio Kashima and Hideki Hirayama. Overcoming the current injection issue in the 310 nm band AlGaN UVB light-emitting diode. Japanese Journal of Applied Physics. 2019; doi: 10.7567/1347-4065/ab460b
[21] M. Ajmal Khan, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Yoichi Yamada and Hideki Hirayama. External quantum efficiency of 6.5% at 300 nm emission and 4.7% at 310 nm emission on bare wafer of AlGaN-based UVB LEDs. ACS Applied Electronic Materials. 2020; doi: 10.1021/acsaelm.0c00172
[22] Tingzhu Wu, Yue Lin, Zhangbao Peng, Huashan Chen, Zhibin Shangguan, Meng Liu, Sung-Wen Huang Chen, Chih-Hao Lin, Hao-Chung Kuo, and Zhong Chen. Interplay of carriers and deep-level recombination centers of 275-nm light-emitting diodes: Analysis on the parasitic peaks over wide ranges of temperature and injection density. Optics Express. 2019; doi: 10.1364/OE.27.0A1060
[23] Carlo De Santi, Matteo Meneghini, Desiree Monti, Johannes Glaab, Martin Guttmann, Jens Rass, Sven Einfeldt, Frank Mehnke, Johannes Enslin, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, and Enrico Zanoni. Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs. Photonics Research. 2017; doi: 10.1364/PRJ.5.000A44
[24] X.A. Cao, S.F. LeBoeuf and T.E. Stecher. Temperature-dependent electroluminescence of AlGaN-based UV LEDs. IEEE Electron Device Letters. 2006; doi: 10.1109/LED.2006.873763
[25] N Lobo Ploch, S Einfeldt, M Frentrup, J Rass, T Wernicke, A Knauer, V Kueller, M Weyers and M Kneissl. Investigation of the temperature dependent efficiency droop in UV LEDs. Semiconductor Science and Technology. 2013; doi: 10.1088/0268-1242/28/12/125021