Figure 1. shows the XRD pattern of the SiO2, TiO2 and SiO2/TiO2 samples. In Fig. 1 (a), the observed broad diffraction peak at around 20 to 25° infers that SiO2 is not constructed by periodic repetitive crystal planes which get on with the standard diffraction data (JCPDS: 29–0085) of amorphous SiO2. This says that our prepared SiO2 material for the first time from Arundo donax L. ash is being in a state of amorphous nature [1] under certain experimental condition. The XRD pattern of TiO2 displayed in Fig. 1 (b) reveals sharp diffraction peaks at 2θ values of 25.43º, 37.08º, 37.94º, 38.79º, 48.21º, 54.01º, 55.24º, 62.37º, 62.75º, 68.84º, 70.36º, 72.21º and 76.16º are corresponding to the (101), (103), (004), (112), (200), (105), (211), (213), (204), (116), (220), (215) and (301) crystal planes respectively (JCPDS: 21-1272) [2] .
This result is well matched with the anatase phase of body centered tetragonal structure of TiO2 (19). Here, the recorded diffraction patterns of SiO2 and TiO2 are have good harmony association with the previous reports[21]. The calculated d spacing values of (110) and (004) planes of TiO2 are 0.35 and 0.24 nm respectively and estimated lattice parameter values of a and c are 3.78 and 9.51 Å. Figure 1 (c-e) belongs to the XRD patterns of SiO2/TiO2 composite samples. When we increase and decrease the SiO2 and TiO2 concentration in wt% respectively in SiO2/TiO2 composite samples, the major diffraction peaks of TiO2 gradually started decreasing clearly tell us the solid-state properties of the amorphous SiO2 and crystalline TiO2 mingled clearly.
Figure 2 shows the room temperature FTIR spectra of SiO2, TiO2 and its composition samples displayed in the range of 4000 − 400 cm− 1. Figure 2(a), there are three major characteristic peaks were observed below 1200 cm− 1 which are attributed to the SiO2 material. These peaks can be assigned to asymmetry Si-O-Si bond stretching (1104 cm− 1), SiO4 tetrahedron ring (796 cm− 1) and O-Si-O bond deformation (468 cm− 1)[22]. Figure 2(b) the peak at 475 cm− 1 is related to characteristic absorption of Ti-O bond[23]. The availability of both SiO2 and TiO2 peaks in SiO2/TiO2 composite samples strongly indicates the composite formation between SiO2 and TiO2.
The recorded UV-visible absorption spectra for SiO2, TiO2 and SiO2/TiO2 nanocomposite samples is given in Figure. 3 (a-e). In TiO2 semiconductor, the 2p level of O2- valence band (VB) to 3d levels of Ti4+ conduction band (CB) makes energy discontinues region in the crystal structure which allowing the absorption of photons. The absorption peak observed around 400 nm for TiO2 indicates the wide band gap nature of the material. Here, the observed sharp absorption peak presumably indicates the good crystalline behavior which strongly confirmed through XRD.
Only the marginal shift in absorption edge of TiO2 is observed after SiO2 composition. The separate and magnified absorption spectrum of SiO2 shows an unclear absorption edge around ~ 293 nm. Generally, amorphous SiO2 has absorption edge value is at far UV region [24]. The observed absorption edge value is also quietly agreed with the reports[25]. The reason could be more impurity states exist in the prepared SiO2 sample. It is noticed that the absorbance value in visible region of SiO2 is high when compare to all other samples reveal that presence of impurity states. The absorption edge shifted to lower energy region as for TiO2 composition with SiO2. This redshift strongly infers that modification of electronic structure by composition making between SiO2 and TiO2. A strong composition formation is also experienced by seeing absorption edges of composition samples exist in between SiO2 and TiO2 absorption edges. The energy band gap (Eg) of the as-prepared samples was calculated using Tauc’s plots mode [26]. The calculated energy band gap values for SiO2, TiO2, SiO2/TiO2 (0.25:0.75), SiO2/TiO2 (0.50:0.50) and SiO2/TiO2 (0.75:0.25) samples are 3.82, 3.17, 3.19, 3.21 and 3.22 eV respectively. The energy bandgap of the pure SiO2 nanoparticles is good agreement with previous report [27]. Moreover, the energy band gap decreases with the increase of TiO2 composition with SiO2, proving that more TiO2 has been attached onto the surface of SiO2 by overlapping SiO2 and TiO2 conduction and valence band edges. A gradual increasing of TiO2 band gap value is seen in the graph by 25, 50 and 75% of SiO2 composition due to overlapping of SiO2 and TiO2 electronic structures.
It is well known that the photoluminescence (PL) spectroscopy has been widely used to examine the recombination rate of excited electron-hole pairs and existed defect states in semiconductors[7]. Generally, in wide band gap material the emission band at UV region is attributed to the discontinuous energy region which existed in the Brillouin zone boundary of material leads to exciton formation. Typically, this is called it as material characteristic peak. On the other hand, other emission bands which particularly seen in visible region are recognized as defect states. Figure 5 shows observed relative PL spectra of the prepared samples at an excitation wavelength of 320 nm. In the PL spectrum of pure SiO2, the emission band shows a strong, intensified and broad PL peak at 410 nm wavelength indicates the electrons and holes recombine process happen rapidly. The emission peak intensity of 50 % SiO2-50 % TiO2 sample is weakened as compare to other samples strongly demonstrating that the recombination of photogenerated charge carriers is suppressed significantly. Further, the avail deep level emissions from TiO2 and composite samples belongs to the oxygen, Ti vacancies and surface oxygen vacancies (SOVs). In PL analysis, the eventual conclusion is that the composition of SiO2 with TiO2 lead to alter the electronic structure of the material and these changes make favorable photogenerated electron and hole separation which further would be effectively improving the photocatalytic performance when go for the photo degradation of dye molecule applications.
The morphologies of the as-prepared samples were evaluated by FESEM (Fig. 6) In Fig. 6 (a) and (b), the captured SiO2 and TiO2 nanoparticles images are shown. The as prepared SiO2 samples show highly agglomerated tiny nanoparticles this may be due to cluster mechanism involved during synthesis as for identical synthesis conditions.
The TiO2 nanoparticles are uniform, smooth with average particle size of 80–120 nm. After composite formation (50 wt% SiO2/50 wt% TiO2) the nanoparticles are highly agglomerate compared to the pristine TiO2 sample. Similarly, no morphological changes were observed much more of TiO2 and SiO2 indicating the dispersion of SiO2 and TiO2 nanoparticles homogeneously in the composite sample. The high distribution of the as-prepared composite may improve its adsorption capacity as well as the active sites of the prepared sample.
The energy-dispersive X-ray spectroscopy (EDX) and mapping study of SiO2 and 50 wt% SiO2/ 50 wt% TiO2 samples were shown in Fig. 7 and Fig. 8 respectively. The observed major elements are related to Si, Ti and O which confirms that presence of TiO2 and SiO2 in composition sample.
In order to probe an internal precise morphology, generally the transmission electron microscopy analysis is employed. It can be seen from Fig. 9 (a) and (b) is that tetragonal spherical like TiO2 and sprinkle like SiO2 morphologies of TEM images. These have well agreement with the early discussed FESEM analysis. Further, the HRTEM image was taken on spherical like TiO2 nanoparticle. This shows interplanar spacing value of 0.24 nm which corresponding to the 004-crystal plane. The polycrystalline nature of TiO2 semiconductor is confirmed by SAED pattern.
XPS analysis was used to investigate the chemical bonds, exact composition, and oxidation state of the compounds. 50 wt% SiO2/50 wt% TiO2 nanocomposite sample was subjected to XPS analysis and observed spectra are displayed in Fig. 10. The high-resolution spectra of prepared samples Fig. 10 (c-d) shows characteristic peaks of Ti 2p, Si 2p and O 1s indorsing the presence of Ti, Si and O shown in respectively. The deconvolution peak provides the necessary proof of the synergistic interface of the prepared element in the nanocomposite. Furthermore, the high-resolution spectra of Ti 2p shows two shake-up satellites located at 458.3 and 464.1 eV are corresponding to Ti 2p3/2 and Ti 2p1/2 peaks respectively representing the existence of Ti4+ species in the as-prepared sample. The Si 2p spectra was observed at 103.2 eV which can be indorsed to Si-O binding energy [28]. The O 1s spectra exhibit three pecks at 528.9, 531.93 and 532.81 eV ascribed to Ti-O-Ti, Ti-O-Si and Si-O-Si respectively [29–31].
Photocatalytic activity of the prepared samples against Rh B
The Rh B dye is selected here as a model contaminant to study the photocatalytic performance, so that the photocatalytic degradation of Rh B is evaluated to demonstrate the catalytic activity of SiO2, TiO2 and its composition (SiO2/TiO2) samples. The removal of Rh B dye is examined under UV-visible light irradiation. Figure 11 demonstrates the photodegradation of Rh B in the certain irradiation time intervals and in the presence of aforementioned photocatalysis.
As shown in Fig. 11 (d), the intensity of the 554 nm absorption peaks decreased rapidly due to the decreases of Rh B chromophore under the UV light irradiation in the existence of our prepared photocatalyst almost disappeared after 150 min signifies that the degradation of Rh B dye molecules. It is noticed that the absorption of the dye decreases with increasing of irradiation time. Compared to pure TiO2 and SiO2, the SiO2/TiO2 nanocomposite samples show high decolorization efficiency of Rh B dye molecules and eventually the observed higher photocatalytic degradation efficiency is in 50 wt% SiO2/50 wt% TiO2 nanocomposite photocatalyst which may be due to higher light absorption as well as photogenerated charge carriers’ separation. This would be strongly confirmed in the early UV-Visible absorption and Photoluminescence spectra studies.
These photocatalytic reaction rates were found by the pseudo first-order equation by monitoring the absorption of the dye molecules (Fig. 13). The pseudo first-order rate constants (kobs) for the photocatalytic degradation response of Rh B were found by using the plots of ln(C/C0) against irradiation time (t), in which C and C0 are the maximum absorptions of Rh B dye at a certain time and the initial time respectively, which were identified from the sequential absorbance variations in the UV-visible absorption spectra. In Fig. 13, all the calculated R2 values were larger than 0.95, demonstrating that the data fitted well with the straight lines (Table-1). Among all prepared photocatalysis, the 50 wt% SiO2/50 wt% TiO2 composite photocatalysis exhibited the best photo- degradation efficiency.
Table 1
Degradation efficiency, Rate constant (Kapp) and R2 values of as prepared photocatalyst samples derived by Pseudo first-order kinetic.
S.No. | Sample name | Degradation efficiency | Kapp | R2 |
1. | SiO2 | 34.42 | 0.0027 | 0.9919 |
2. | TiO2 | 61.41 | 0.0066 | 0.9823 |
3. | 25 wt% SiO2-75 wt% TiO2 nanocomposite | 65.42 | 0.0072 | 0.9860 |
4. | 50 wt% SiO2-50 wt% TiO2 nanocomposite | 93.70 | 0.0148 | 0.9516 |
5. | 75 wt% SiO2-25 wt% TiO2 nanocomposite | 77.03 | 0.0101 | 0.9969 |
The recyclability is one of the furthermost features for real use of prepared photocatalysts materials. Hence, the recyclability of the as-prepared 50 wt% SiO2-50 wt% TiO2 nanocomposite was investigated up to four successive cycle and the outcomes are shown in Fig. 14. In each cycle, a fresh Rh B solution was used to examine the stability of the photocatalyst material. The 50 wt% SiO2-50 wt% TiO2 nanocomposite shows its stable photocatalytic action for the four successive runs. Subsequently four repeated cycles, we noticed only a minor change in the photocatalytic capability compared to the first cycle. This observed loss in degradation efficiency may be due the drops of catalyst particles during the collecting process.
The photocatalytic performance of active species in the degradation process is needs to be recognize the better reaction mechanism of the 50 wt% SiO2/50 wt% TiO2 nanocomposite photocatalytic sample.
Therefore, various scavengers were used to found the role of active species in the degradation. So, here we used benzoquinone (BQ), triethanolamine (TEOA), and isopropyl alcohol (IPA) as a *O2−, hole and *OH scavengers, respectively. The experimental results are displayed in Fig. 15. After the addition of the trapping agents to the photocatalysis reaction solution, the Rh B degradation efficiency is in the order of TEOA > BQ > IPA. This trapping experimental results suggest that the degradation of Rh B in the presence of 50 wt% SiO2/50 wt% TiO2 composite photocatalysis was most interfered with the existence of IPA it shows that *OH radicals is the primary active species in the dye degradation process. Also, the adding of BQ scavenges *O2 shows notable decrease in the degradation efficiency it shows that the superoxide radicals also play significant part in the degradation. The radical trapping outcomes reiterate the role of active species in the photocatalytic degradation of Rh B was in the order of *OH>*O2 > h+. This result eventually tells us apart from doping, manipulating different morphologies in TiO2 semiconductor, the composites formation along with amorphous materials is also a promising route to find out better photocatalytic active materials.