In this paper, absolute evaluation of Radio Frequency Micro Electromechanical System (RF MEMS) to improve parameters like high actuation voltage and low switching time, by introducing a new fixed - fixed RF MEMS capacitive switch. The proposed switch designed step-by-step evaluation of the plane beam, a novel structure of beam, and deposit the perforations and meanders to reducethe pull-in voltage. All the RF MEMS switch design parameters arestudy using the COMSOL Multiphysics FEM (Finite Element Model) tool. The proposed RF MEMS switch express low pull-in voltageof 4.75V and good return, insertion, and isolation losses in both upstate and downstate conditions are >10dB, below 0.1dB and 60dB, respectively. The dielectric layer as silicon nitride (Si3N4), beam as a gold material. The RLC values are extracted by using lumped model design. The RF MEMS shunt switch (capacitance, inductance, and resistance) of the MEMS bridge are accurately evaluated from the S-parameter analysis. The computational and simulated results are good agreement with each other, which indicates the validity of the proposed switch for K (18-26) GHz band applications.