Fig.2 XRD patterns of B4C-TiB2 ceramic composites sintered at different temperatures
Fig.2 shows the phase composition of B4C-TiB2 ceramic composites prepared at different sintering temperatures. There is no diffraction peak of Ti3SiC2 in all XRD images, which indicates that Ti3SiC2 has completely reacted with B4C and transformed into TiB2 and SiC in the sintering process at four different sintering temperatures. When the temperature is above 1200 ℃, the following reactions occur[9]:


The reaction (1) and (2) ended at 1600 ℃, on the basis of the above results, the overall reaction in the system can be described as the following reaction[9]:

TiC does not exist in the final product, appearing as an intermediate product during the whole sintering process. According to the XRD test results, the content of each phase is shown in Table 1. It can be seen that the composition of the composite ceramics changes little when sintered at different sintering temperatures, which is mainly composed of TiB2 and B4C, with a small amount of SiC and C. When the temperature rise, the content of SiC decreases and the content of C increases, which may be due to the slight evaporation of silicon in the sintering process. It can be inferred that the evaporation of Si also increases with the increase of temperature.
Table 1 contents of different phases in B4C-TiB2 composite ceramics sintered at different temperatures
Simple name
|
Sintering Temperature (℃)
|
TiB2 (wt.%)
|
B4C (wt.%)
|
SiC (wt.%)
|
C (wt.%)
|
BT1800
|
1800
|
30.3
|
61.4
|
5
|
3.3
|
BT1850
|
1850
|
30.1
|
61.6
|
4.7
|
3.6
|
BT1900
|
1900
|
29.6
|
61.9
|
4.2
|
4.4
|
BT1950
|
1950
|
30.6
|
61.2
|
3.5
|
4.7
|
Table 2 Properties of ceramics prepared by different sintering processes
Simple code
|
Content of Ti3SiC2 (vol.%)
|
Sintering Temperature(℃)
|
Density (g/cm3)
|
Relative Density (%)
|
Hardness (GPa)
|
Flexural Strengh (MPa)
|
Fracture Toughness (MPa·m1/2)
|
B1800
|
0
|
1800
|
2.50
|
99.20
|
33.5
|
224.43
|
5.96
|
BT1800
|
30
|
1800
|
3.12
|
99.84
|
28.03
|
358.30
|
16.41
|
BT1850
|
30
|
1850
|
3.13
|
100.32
|
28.44
|
351.10
|
17.15
|
BT1900
|
30
|
1900
|
3.17
|
101.54
|
27.28
|
405.11
|
18.94
|
BT1950
|
30
|
1950
|
3.17
|
101.44
|
28.16
|
398.01
|
17.53
|
Table 2 shows the mechanical properties of the samples prepared by different sintering processes. The sample B1800 is pure B4C ceramic sintered by SPS as comparative group, whose hardness, bending strength and fracture toughness are 33.5 GPa, 224.43 MPa and 5.96 MPa·m1/2, respectively. The density of simples BT1800 to BT1950 is slightly higher than that of pure B4C ceramic sintered by SPS. Because of the slight evaporation of silicon, the density of B4C-TiB2 composite ceramic is even slightly higher than the theoretical density. Fig.3(a) shows the variation of relative density and hardness of B4C-TiB2 composite ceramic versus sintering temperature. The relative density becomes larger with the increase of temperature, reaches the highest point at 1900 ℃, and decreases slightly at 1950 ℃. When the ceramic composition is basically the same, the density is the key factor affecting the hardness of ceramics, while the ceramics sintered at 1800 ℃ and above are almost dense (The relative density of all simples are above 99.8%), so the influence of sintering temperature on the hardness of ceramics is negligible. The hardness of the sample containing 30 vol.% Ti3SiC2 decreases to a certain extent compared with that of pure B4C. However, due to the high hardness of the main second phase TiB2 formed by the reaction, the hardness of the composite ceramics still remains at a high level between 27.18 GPa and 28.44 GPa.
Fig.3(b) shows the variation of flexural strength and fracture toughness of B4C-TiB2 ceramics with sintering temperature. Simple and BT1850 have similar flexural strength and fracture toughness, and the properties of BT1900 are obviously higher than the former two. This change trend is consistent with the relative density in Fig.3(a). Fig.4(a)-(d) are the SEM pictures of fracture appearance of samples BT1800 to BT1950 in turn. Fig.4(b) shows there are some large-size B4C grains in the samples sintered at 1850 ℃, resulting in a small decrease in the flexural strength of the samples sintered at 1800 ℃. The comparison of Fig.4(a)-(c) shows that the samples sintered at 1800 ℃, 1850 ℃ and 1900 ℃ have similar grain sizes (excluding a small part of large grains in Fig.5(b)), so the significant increase of density at 1900℃ is the reason for the improvement of flexural strength and fracture toughness of sample BT1900. Compared with BT1900, the bending strength and fracture toughness of BT1950 are decreased, especially the latter. The main reason for that is the obvious grain growth of B4C as shown in Fig.5(d), and the secondary reason is the slight decrease of the relative density as shown in Fig.3(a). Fig.4(f) is the BSE image of the ceramics sintered at 2000 ℃. It can be clearly seen that if the temperature is further increased, the grains grow furthermore, which is not conducive to the integrated mechanical properties of the B4C-TiB2 composite ceramic. Moreover, when the sintering temperature is 2000 ℃, the raw materials reacted with graphite mold and damage it. So, the bending strength and fracture toughness reach the maximum values of 405.11 MPa and 18.94 MPa·m1/2 when the sintering temperature is 1900 ℃. Compared with the fracture appearance of pure B4C ceramic (Fig. 4 (e)), the fracture surface of the simples with additive Ti3SiC2 (Fig. 4(a)-(d)) is much rougher, showing a mixed fracture mode. Intergranular fracture and transgranular fracture correspond to the rough and flat surface in the figure respectively[10]. In Fig.4, the dark gray flat area is the B4C matrix, and the light gray rough area is TiB2 particles, which indicates that in B4C-TiB2 composite ceramics, the fracture mode of B4C phase and TiB2 phase is the transgranular fracture and intergranular fracture respectively.
Fig.3 Relative density and mechanical properties of the B4C-TiB2 composite ceramics sintered at different temperatures
Fig.4 (a)-(d) SEM images of B4C-TiB2 composite ceramics sintered at 1800 ℃, 1850 ℃, 1900 ℃ and 1950 ℃ in turn; (e) SEM image of pure B4C ceramic sintered at 1800℃; (f) BSE image of B4C-TiB2 composite ceramic sintered at 2000 ℃
Fig.5 shows the BSE images of the B4C-TiB2 composite ceramic prepared by SPS at 1900 ℃ for 5 min. It can be seen from Fig.5(a) that there are TiB2 particles with different sizes from nanometer-scale to micron-scale dispersed in the B4C matrix. Due to the mismatch of thermal expansion coefficients of B4C and TiB2 (B4C: 4.5×10-6 k-1; TiB2: 8.1×10-6 k-1) [11], there is large residual stress at the interface of the two phases, which induces the crack deflection along the grain boundary and prolongs the crack propagation path, which greatly improves the toughness. The nano TiB2 particles embedded in the B4C matrix can introduce internal stress, which will strengthen the B4C matrix by lattice distortion effect, and can also nail the dislocations and hinder their movement. In addition, as shown in Fig.5(c), the nano TiB2 and SiC particles at the grain boundary of B4C can also strengthen the grain boundary and prevent the crack growth. Fig.5(b) is the BSE image of TiB2-SiC aggregates, in which the dark gray, medium gray and light gray phases are B4C, SiC and TiB2, respectively. In this multiphase mixing region with a large amount of SiC, there is adverse stress effects that have a negative effect on flexural strength[12]. However, the TiB2-SiC aggregates can expand the crack propagation path and change the crack propagation direction to consume the crack growth energy, which is helpful to improve the toughness. The crack propagation path in this area is shown in Fig.5(d).
Fig.5 BSE images of different structures of the B4C-TiB2 composite ceramic sintered at 1900 ℃
Table 3 shows the mechanical properties of B4C-TiB2 composite ceramics prepared by different starting materials and sintering methods in recent two years[13-17]. Compared with these works, the flexural strength (405.11 MPa) of the simple that we sintered by SPS at 1900 ℃ is in the middle to a low level, but the fracture toughness (18.94 MPa·m1/2) is much higher than the fracture toughness shown in the table, which can be described as a leap forward improvement. By making an in-depth comparative study of the differences between our work and the work of other researchers, we find that there are two fundamental reasons for the excellent fracture toughness of our B4C-TiB2 composite ceramics:
The first is the formation of a three-dimensional network of TiB2 in the composites. In the area as shown in Fig.5(f), B4C and TiB2 are occluded and interlaced, and TiB2 forms a network structure in the B4C matrix. In the low magnification backscatter image Fig.5(e), we can find out that this network structure accounts for a large proportion of the whole material composition, and it does not exist in isolation. Links are formed between each small network, connecting a larger network structure covering the whole composite as a whole. At the same time, this network divides B4C concentrated area and surrounds each one, so that there is no large area of continuous B4C phase in the material, which is very unfavorable to the toughness of the composite. With higher interlacing degree of TiB2 and B4C phases, the cracks need to bypass more multiple two-phase interfaces, change the direction for more times, and disperse into more small cracks in the process of extension. Therefore, the overall three-dimensional network structure greatly improves the fracture toughness of the B4C-TiB2 composite ceramics.
Table 3 Comparison of the properties of the B4C-TiB2 composite ceramics reported in recent years and produced by us
Serial no.
|
Starting powder
|
Relative Density (%)
|
KIC (MPa·m1/2)
|
Flexural strength (MPa)
|
Ref.(year)
|
1
|
B4C + 5 wt.% (Ti3SiC2 +Si)
|
——
|
5.61
|
457.6
|
[13](2019)
|
2
|
B4C + 20 mol%TiB2
|
97.9
|
3.7
|
——
|
[14](2020)
|
3
|
B4C + 15 wt.%SiC + 20 mol%TiB2
|
98.6
|
4.2
|
343.8
|
[15](2020)
|
4
|
B4C+30 wt.% (TiB2 +Si)
|
99.6
|
5.77
|
531.2
|
[16](2018)
|
5
|
B4C + 6.45 vol.%SiC + 7.78 vol%TiB2
|
99.62
|
6.38
|
632
|
[17](2019)
|
6
|
B4C + 30 vol.% (Ti3SiC2)
|
101.54
|
18.94
|
405.11
|
This work
|
Another reason is the existence of C, which exists in the form of graphite. With the increase of reaction temperature, the content of C increased, and its effect on the properties of the materials cannot be ignored. The graphite formed by the reaction of Ti3SiC2 and B4C exists in the grain boundary in the form of bands, as shown in the TEM image Fig.6. The existence of the graphite layer reduces the bonding strength of the interface, which has an adverse effect on the hardness and strength of the composite ceramics[18]. But on the other hand, its existence can limit grain growth. In the cooling process, microcracks are produced under the effect of interfacial stress produced by different thermal expansion coefficients, and according to the mechanism of microcrack toughening, it is beneficial to improve the toughness of the material. Combined with the data in Table 1 and Fig3(b), it can be found out that the fracture toughness of the material is positively related to the graphite content before the abnormal grain growth occurs at 1950 ℃。
Fig.6 TEM image of the B4C-TiB2 composite ceramic sintered at 1900 ℃