This paper reports on the fabrication and photovoltaic characteristics of a heterojunction solar cell based on an organic small molecular semiconductor N-749 black dye (N749-BD). N749-BD is a novel semiconducting material for solar cells applications with the advantage of broad absorption spectrum of sunlight. For this purpose, an ITO/PEDOT:PSS/N749-BD/Ag heterojunction device is prepared-where poly (3,4-ethylene dioxythiophene):polystyrene sulfonate (PEDOT:PSS) is used as buffer layer/hole transport layer (HTL) and indium tin oxide (ITO) as conducting transparent. The photovoltaic properties of the device are investigated at standard testing conditions (STC); i.e., 25 0 C, 1.5 AM global and 100 mW/cm 2 irradiation, photovoltaic parameters of the device such as fill factor (FF) and power conversion efficiency (PCE) are found to be 0.65 and 3.8±0.5 %, respectively. Current-voltage (I-V) characteristics of the device are also studied in dark conditions at room temperature to measure reverse saturation current (I 0), series resistance at the interface, rectification ratio (RR), barrier height (ϕ b) and ideality factor (n). Optical bandgap (E g) of N749-BD thin film is found by applying Tauc’s plot on its ultraviolet-visible (UV-Vis) spectrum which is measured to be 1.80 eV and 2.69 eV. Bond dynamics and composition of analysis of N749-BD is carried out via Fourier transformed infrared (FTIR). Morphology of the thin film of N749-BD on quartz glass are investigated by utilizing scanning electron microscopy (SEM) with in-situ energy dispersive x-ray (EDX) spectroscopy which exhibits random distribution of N749-BD grains across the surface with nearly uniform grain size. The higher FF and PCE of the ITO/PEDOT:PSS/N749-BD/Ag device suggests the potential application of N749-BD to be used in state-of-the-art, low cost, simple manufacturing process and high performance solar cells.